| Part Number: DR511-1832-013H | Manufacturer: Selex Es Limited | NSN: 5962-01-371-6294 (5962013716294) | |
| Item Name: microcircuit memory | CAGE Code: K1066 | ||
| Alternate P/N : DR5111832013H | |||
Please utilize the RFQ form below to submit an online quote request for NSN part number DR511-1832-013H of Microcircuit Memory by manufacturer Selex Es Limited having CAGE Code K1066 with NSN number 5962-01-371-6294. Please also fill the requested quantity and need by date form fields for your required part DR511-1832-013H. This information will help us prioritize your request effectively.
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Aerospace Orbit is owned and operated by ASAP Semiconductor – an AS9120B, ISO 9001:2015, and FAA AC 00-56B distributor of Selex Es Limited NSN parts. We stock difficult-to-find parts from more than 75,000 manufacturers. Request a quote for part number DR511-1832-013H and an account manager will contact you shortly.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-371-6294 Item Description: Microcircuit Memory | 5962 | 013716294 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | U | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Dr511-1832-013h | 5 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | PACER DAWN |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, DIGITAL, MONOLITHIC 256K (32K X 8-BIT) CMOS, STATIC RANDOM ACCESS MEMORY (SRAM) |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | ESD |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PIN |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
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