Part Number: 85-49118-001 | Manufacturer: L 3 Communications Integrated | NSN: 5962-01-326-2822 (5962013262822) | |
Item Name: microcircuit memory | CAGE Code: 0GCL4 | ||
Alternate P/N : 8549118001 |
Please utilize the RFQ form below to submit an online quote request for NSN part number 85-49118-001 of Microcircuit Memory by manufacturer L 3 Communications Integrated having CAGE Code 0GCL4 with NSN number 5962-01-326-2822. Please also fill the requested quantity and need by date form fields for your required part 85-49118-001. This information will help us prioritize your request effectively.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-326-2822 Item Description: MICROCIRCUIT,MEMORY | 5962 | 013262822 | N | |||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
85-49118-001 | 2 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CRHL | BIT QUANTITY524288 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC14 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | FEAT | SPECIAL FEATURESNUCLEAR HARDNESS CRITICAL ITEM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
MEMORY | ABKW | OVERALL HEIGHT0 432 INCHES MAXIMUM |
MEMORY | ADAQ | BODY LENGTH1 490 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 172 INCHES MINIMUM AND 0 217 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING825 0 MILLIWATTS |
MEMORY | CQZP | INPUT CIRCUIT PATTERN18 INPUT |
MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE AND WBUFFERED OUTPUT AND WENABLE AND ELECTROSTATIC SENSITIVE |
MEMORY | CSWJ | WORD QUANTITY65536 |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-10 MIL-M-38510 |
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