| Part Number: 1AB012090012 | Manufacturer: Alcatel Telspace Unite Electronique | NSN: 5962-01-447-3169 (5962014473169) | |
| Item Name: microcircuit memory | CAGE Code: F6204 | ||
Please utilize the RFQ form below to submit an online quote request for NSN part number 1AB012090012 of Microcircuit Memory by manufacturer Alcatel Telspace Unite Electronique having CAGE Code F6204 with NSN number 5962-01-447-3169. Please also fill the requested quantity and need by date form fields for your required part 1AB012090012. This information will help us prioritize your request effectively.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-447-3169 Item Description: MICROCIRCUIT,MEMORY | 5962 | 014473169 | N | |||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1AB012090012 | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.635 INCHES MINIMUM AND 1.680 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 0.565 INCHES MINIMUM AND 0.605 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.160 INCHES MAXIMUM" |
| AFGA | OPERATING TEMP RANGE | -40.0/+85.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+125.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | HIGH NOISE AND LOW POWER" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 32 INPUT" |
| CSWJ | UNABLE TO DECODE | UNABLE TO DECODE" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL INPUT" |
| CZER | MEMORY DEVICE TYPE | EPROM" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PIN" |
| ADAQ | BODY LENGTH | 1.635 INCHES MINIMUM AND 1.680 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 0.565 INCHES MINIMUM AND 0.605 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.160 INCHES MAXIMUM" |
| AFGA | OPERATING TEMP RANGE | -40.0/+85.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+125.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | HIGH NOISE AND LOW POWER" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 32 INPUT" |
| CSWJ | UNABLE TO DECODE | UNABLE TO DECODE" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL INPUT" |
| CZER | MEMORY DEVICE TYPE | EPROM" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PIN" |
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