Please submit your quote request for NSN part 330471-002 (Microcircuit Memory) using the RFQ form below. This part 330471-002 is manufactured by Bae Systems Information And Electronic Systems Integration I (81413) and carries NSN 5962-01-358-4068. To expedite processing, kindly provide the requested quantity and need-by date in the designated form fields.
For reference, this part 330471-002 has an NSN of 5962-01-358-4068, with a NIIN of 01-358-4068 and an NCB Code of 01 (USA). It falls under FSG 59 Electrical and Electronic Equipment Components and FSC 5962 Microcircuits Electronic for classification purposes. Providing complete details ensures we prioritize your request effectively.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-358-4068 Item Description: Microcircuit Memory | 5962 | 013584068 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 330471-002 | 2 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAU | BODY HEIGHT0 060 INCHES MINIMUM AND 0 100 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING440 0 MILLIWATTS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ERASABLE AND ELECTROSTATIC SENSITIVE |
| MEMORY | CRHL | BIT QUANTITY65536 |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 LEADLESS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510 |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | ADAQ | BODY LENGTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC80 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC6 00 INPUT PICOFARADS MAXIMUM AND 12 00 OUTPUT PICOFARADS MAXIMUM |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC1000 00 NANOSECONDS MAXIMUM DELAY |
| MEMORY | CZER | MEMORY DEVICE TYPEPROM |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CSWJ | WORD QUANTITY8192 |
| End Use : 21320 | Semiconductors |
|---|---|
| Schedule B : 8542900000 (NAICS 334413) | Electronic integrated circuits and microassembly parts |
| SITC : 77689 | Parts of electronic integrated circuits and microassembles |
| ADPE | Represents items with no adp components |
|---|---|
| CRITL | The item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. |
| ESD | B - Represents items with esd sensitivity. |
| HMIC | N - Indicates there is no data in the hmirs and the nsn is in a fsc not generally suspected of containing hazardous materials. |
| PMIC | A - Item does not contain precious metal. |
| AAC | Z |
|---|---|
| Classification Control | U |
| MGMT_CTL | Sf9ew-n |
| Quantity per pack | 0 |
| Repariability | |
| Shelf Life | N/A |
| SOS | Sms |
| Unit of Measure | Ea |
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