Please submit your quote request for NSN part 202104-007 (Microcircuit Memory) using the RFQ form below. This part 202104-007 is manufactured by Bae Systems Information And Electronic Systems Integration I (81413) and carries NSN 5962-01-262-2185. To expedite processing, kindly provide the requested quantity and need-by date in the designated form fields.
For reference, this part 202104-007 has an NSN of 5962-01-262-2185, with a NIIN of 01-262-2185 and an NCB Code of 01 (USA). It falls under FSG 59 Electrical and Electronic Equipment Components and FSC 5962 Microcircuits Electronic for classification purposes. Providing complete details ensures we prioritize your request effectively.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-262-2185 Item Description: Microcircuit Memory | 5962 | 012622185 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 202104-007 | 1 | 8 | E |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 840 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING794 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEPROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
| MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA81349-MIL-M-38510204 GOVERNMENT SPECIFICATION |
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